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Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence

Lee, Robert B. and Vahala, Kerry J. and Zah, Chung-En and Bhat, Rajaram (1993) Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence. Applied Physics Letters, 62 (19). pp. 2411-2412. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:LEEapl93

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Abstract

The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole fractions in the interval 0.3<x<0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with results of carrier lifetime experiments by M. C. Wang, K. Kash, C. E. Zah, R. Bhat, and S. L. Chuang [Appl. Phys. Lett. 62, 166 (1993)].


Item Type:Article
Additional Information:© 1993 American Institute of Physics. Received 21 December 1992; accepted 15 March 1993. The authors would like to acknowledge the support of the National Science Foundation. One of us (R.B.L.) would like to acknowledge the support of a National Defense Science and Engineering Graduate Fellowship.
Record Number:CaltechAUTHORS:LEEapl93
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LEEapl93
Alternative URL:http://dx.doi.org/10.1063/1.109381
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10003
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:03 Apr 2008
Last Modified:26 Dec 2012 09:55

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