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Barrier-controlled low-threshold pnpn GaAs heterostructure laser

Lee, C. P. and Gover, A. and Margalit, S. and Samid, I. and Yariv, A. (1977) Barrier-controlled low-threshold pnpn GaAs heterostructure laser. Applied Physics Letters, 30 (10). pp. 535-538. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:LEEapl77a

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Abstract

Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm^2) room-temperature threshold currents.


Item Type:Article
Additional Information:© 1977 American Institute of Physics. Received 1 November 1976; accepted for publication 11 March 1977. Research supported by the Office of Naval Research and the National Science Foundation.
Subject Keywords:GALLIUM ARSENIDES, SEMICONDUCTOR LASERS, THRESHOLD ENERGY, SCHOTTKY BARRIER DIODES, EMISSION SPECTRA, MODULATION, ALUMINIUM ARSENIDES, FABRICATION
Record Number:CaltechAUTHORS:LEEapl77a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LEEapl77a
Alternative URL:http://dx.doi.org/10.1063/1.89225
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10027
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:07 Apr 2008
Last Modified:26 Dec 2012 09:56

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