Scherer, A. and Roukes, M. L. (1989) Quantum device microfabrication: Resolution limits of ion beam patterning. Applied Physics Letters, 55 (4). pp. 377-379. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:SCHEapl89
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We have achieved precise control of the lateral electrical damage accompanying ion beam patterning of submicron electron devices from semiconductor materials. In situ transport measurements, made in the etching chamber during the definition process, provide an exact and reproducible means of end-point detection, irrespective of material structure and ion beam parameters. We apply this to routinely fabricate conducting channels having widths below 100 nm from high-mobility GaAs/AlGaAs heterojunctions. Subsequent low-temperature magnetotransport measurements and successive optimization of processing conditions enable us to systematically obtain the minimum conducting width. Through these studies we explore the ultimate resolution limits of the ion beam patterning process.
|Additional Information:||Copyright © 1989 American Institute of Physics. Received 6 February 1989; accepted 16 May 1989. We gratefully acknowledge the contributions of B.P. Van der Gaag, T.L. Cheeks, E.D. Beebe, R.J. Martin, and P.S.D. Lin to this work.|
|Subject Keywords:||DAMAGE, PHYSICAL RADIATION EFFECTS, ETCHING, GALLIUM ARSENIDES, MICROELECTRONICS, FABRICATION, HETEROJUNCTIONS, ALUMINIUM ARSENIDES, ELECTRICAL PROPERTIES, CHARGED−, PARTICLE TRANSPORT, OPTIMIZATION, RESOLUTION, ION BEAMS, NEON IONS, ELECTRIC CONTACTS, EV RANGE 100−, 1000, LITHOGRAPHY, OHMIC CONTACTS|
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|Deposited On:||07 Apr 2008|
|Last Modified:||26 Dec 2012 09:56|
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