Salzman, J. and Lang, R. and Margalit, S. and Yariv, A. (1985) Tilted-mirror semiconductor lasers. Applied Physics Letters, 47 (1). pp. 9-11. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:SALapl85b
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Broad-area GaAs heterostructure lasers with a tilted mirror were demonstrated for the first time, with the tilted mirror fabricated by etching. These lasers operate in a smooth and stable single lateral mode with a high degree of spatial coherence. The suppression of filamentation manifests itself in a high degree of reproducibility in the near-field pattern.
|Additional Information:||Copyright © 1985 American Institute of Physics. Received 7 February 1985; accepted 1 April 1985. This research is supported by grants from the Army Research Office, the Air Force Office of Scientific Research, and the Office of Naval Research. J. Salzman would like to acknowledge the support of the Bantrell Post-doctoral Fellowship and the Fulbright Fellowship. R. Lang would like to acknowledge the support of the National Science Foundation.|
|Subject Keywords:||GALLIUM ARSENIDES, HETEROJUNCTIONS, LASER MIRRORS, ETCHING, FABRICATION, SEMICONDUCTOR LASERS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||08 Apr 2008|
|Last Modified:||26 Dec 2012 09:56|
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