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Lateral coherence properties of broad-area semiconductor quantum well lasers

Larsson, A. and Salzman, J. and Mittelstein, M. and Yariv, A. (1986) Lateral coherence properties of broad-area semiconductor quantum well lasers. Journal of Applied Physics, 60 (1). pp. 66-68. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:LARjap86

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Abstract

The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.


Item Type:Article
Additional Information:Copyright © 1986 American Institute of Physics. Received 2 January 1986; accepted 11 March 1986. The work described in this paper was performed under a contract with the National Aeronautics and Space Administration (NAS7-918) and under grants from the Office of Naval Research and the Army Research Office. J. Salzman would like to acknowledge the support of the Bantrell Postdoctoral Fellowship and the Fulbright Fellowship. The authors would like to thank Y. Arakawa for assistance in the fabrication of the lasers used in this work.
Subject Keywords:SEMICONDUCTOR LASERS, FABRICATION, LINE WIDTHS, COHERENT RADIATION, HETEROJUNCTIONS, GALLIUM ARSENIDES, ALUMINUM ARSENIDES, MOLECULAR BEAM EPITAXY, WAVEGUIDES, STABILITY
Record Number:CaltechAUTHORS:LARjap86
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LARjap86
Alternative URL:http://dx.doi.org/10.1063/1.337629
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10055
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:08 Apr 2008
Last Modified:26 Dec 2012 09:56

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