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Activation analysis of rapid thermally annealed Si and Mg implanted semi-insulating GaAs

Tandon, J. L. and Leybovich, I. S. and Bai, G. (1989) Activation analysis of rapid thermally annealed Si and Mg implanted semi-insulating GaAs. Journal of Vacuum Science and Technology B, 7 (5). pp. 1090-1095. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:TANjvstb89

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Abstract

Electronic properties of Si and Mg implants in undoped semi-insulating GaAs are studied. The activation of the implants is achieved by rapid thermal annealing. The effects of implantation dose and anneal temperature on the measured electrical activity are investigated. In spite of similar depth distributions and implantation damage characteristics, a marked difference between the activations of the Si and the Mg ions is observed for the dose range considered (3×10^12 – 1×10^14 cm^–2). Lattice strain measurements performed by x-ray rocking curves indicate that the residual implantation damage after annealing is not largely responsible for this difference. The difference is mostly electronic in character, as also suggested by photoluminescence measurements. At high annealing temperatures, changes in the compensating properties of undoped semi-insulating GaAs are suspected, and are found to play an important role in the activation of implanted ions, affecting the n- and p-type dopants conversely.


Item Type:Article
Additional Information:© 1989 American Vacuum Society. (Received 8 February 1989; accepted 15 May 1989) This work was supported by McDonnell Douglas Corporation's Internal Research and Development funds. Assistance provided by M.C. Stonage and P.E. Fribertshauser with implantations is acknowledged. We also thank J.K. Abrokwah at McDonnell Douglas and M-A. Nicolet at Caltech for their continued interest and encouragement.
Subject Keywords:ACTIVATION ANALYSIS; ANNEALING; SILICON IONS; MAGNESIUM IONS; IMPURITY STATES; GALLIUM ARSENIDES; DOPED MATERIALS; DOSE RATES; TEMPERATURE DEPENDENCE; ELECTRICAL PROPERTIES; PHOTOLUMINESCENCE; N–TYPE CONDUCTORS; ION IMPLANTATION; SILICON 28; MAGNESIUM 24
Record Number:CaltechAUTHORS:TANjvstb89
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TANjvstb89
Alternative URL:http://dx.doi.org/10.1116/1.584556
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10160
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:15 Apr 2008
Last Modified:26 Dec 2012 09:57

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