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Pulsed-laser annealing of implanted layers in GaAs

Tandon, J. L. and Nicolet, M-A. and Tseng, W. F. and Eisen, F. H. and Campisano, S. U. and Foti, G. and Rimini, E. (1979) Pulsed-laser annealing of implanted layers in GaAs. Applied Physics Letters, 34 (9). pp. 597-599. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:TANapl79b

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Abstract

Semi-insulating Si-implanted GaAs has been irradiated by a ruby-laser pulse (lambda=0.694 µm, tp=15 ns) without using an encapsulant. Hall-effect measurements indicate that the values of sheet resistance, effective sheet electron concentration, and effective electron mobilities are roughly comparable to those of conventionally annealed samples. TEM micrographs show a difference in the defect structure after these two types of annealing.


Item Type:Article
Additional Information:Copyright © 1979 American Institute of Physics. (Received 6 November 1978; accepted for publication 7 February 1979) This work was supported at Caltech, in part, by ONR (L.R. Cooper). We would like to thank G. Vitali and I. Catalano for assistance with laser irradiation.
Subject Keywords:GALLIUM ARSENIDES, ION IMPLANTATION, PULSES, ANNEALING, LAYERS, RUBY LASERS, ELECTRIC CONDUCTIVITY, ELECTRON DENSITY, ELECTRON MOBILITIES, ELECTRON MICROSCOPY, CRYSTAL DEFECTS
Record Number:CaltechAUTHORS:TANapl79b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TANapl79b
Alternative URL:http://dx.doi.org/10.1063/1.90887
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10162
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:15 Apr 2008
Last Modified:26 Dec 2012 09:57

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