Tandon, J. L. and Nicolet, M-A. and Tseng, W. F. and Eisen, F. H. and Campisano, S. U. and Foti, G. and Rimini, E. (1979) Pulsed-laser annealing of implanted layers in GaAs. Applied Physics Letters, 34 (9). pp. 597-599. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:TANapl79b
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Semi-insulating Si-implanted GaAs has been irradiated by a ruby-laser pulse (lambda=0.694 µm, tp=15 ns) without using an encapsulant. Hall-effect measurements indicate that the values of sheet resistance, effective sheet electron concentration, and effective electron mobilities are roughly comparable to those of conventionally annealed samples. TEM micrographs show a difference in the defect structure after these two types of annealing.
|Additional Information:||Copyright © 1979 American Institute of Physics. (Received 6 November 1978; accepted for publication 7 February 1979) This work was supported at Caltech, in part, by ONR (L.R. Cooper). We would like to thank G. Vitali and I. Catalano for assistance with laser irradiation.|
|Subject Keywords:||GALLIUM ARSENIDES, ION IMPLANTATION, PULSES, ANNEALING, LAYERS, RUBY LASERS, ELECTRIC CONDUCTIVITY, ELECTRON DENSITY, ELECTRON MOBILITIES, ELECTRON MICROSCOPY, CRYSTAL DEFECTS|
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|Deposited By:||Archive Administrator|
|Deposited On:||15 Apr 2008|
|Last Modified:||26 Dec 2012 09:57|
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