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Silicon implantation in GaAs

Tandon, J. L. and Nicolet, M-A. and Eisen, F. H. (1979) Silicon implantation in GaAs. Applied Physics Letters, 34 (2). pp. 165-167. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:TANapl79a

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Abstract

The electrical properties of room-temperature Si implants in GaAs have been studied. The implantations were done at 300 keV with doses ranging from 1.7×10^13 to 1.7×10^15 cm^–2. The implanted samples were annealed with silicon nitride encapsulants in H2 atmosphere for 30 min at temperatures ranging from 800 to 900°C to electrically activate the implanted ions. Results show that the implanted layers are n type, which implies that the Si ions preferentially go into Ga sites substitutionally. For low-dose implants, high (~90%) electrical activation of the implanted ions is achieved and the depth distribution of the free-electron concentration in the implanted layer roughly follows a Gaussian. However, for high-dose implants, the activation is poor (<15% for a 900 °C anneal) and the electron concentration profile is flat and deeper than the expected range.


Item Type:Article
Additional Information:Copyright © 1979 American Institute of Physics. (Received 15 September 1978; accepted for publication 2 November 1978) This work was supported, in part, by the Advanced Research Projects Agency of the Department of Defense and was monitored by the Air Force Office of Scientific Research under Contract No. F49620-77-C-0087. We would like to thank S. Matteson at Caltech for helping us with the implantations and E. Babcock at the Rockwell International Science Center for depositing the silicon nitride films.
Subject Keywords:GALLIUM ARSENIDES, SILICON IONS, ION IMPLANTATION, ANNEALING, DEPTH DOSE DISTRIBUTIONS, ELECTRIC CONDUCTIVITY, SILICON NITRIDES, PHYSICAL RADIATION EFFECTS, DOPED MATERIALS, ELECTRON MOBILITY
Record Number:CaltechAUTHORS:TANapl79a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TANapl79a
Alternative URL:http://dx.doi.org/10.1063/1.90715
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10164
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:15 Apr 2008
Last Modified:26 Dec 2012 09:57

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