Rav-Noy, Z. and Lu, L-T. and Kapon, E. and Mukai, S. and Margalit, S. and Yariv, A. (1984) Vertical field-effect transistors in III-V semiconductors. Applied Physics Letters, 45 (3). pp. 258-260. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:RAVapl84
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Abstract
Vertical metal-semiconductor field-effect transistors in GaAs/GaAlAs and vertical metal-oxide-semiconductor field-effect transistors (MOSFET's) in InP/GaInPAs materials have been fabricated. These structures make possible short channel devices with gate lengths defined by epitaxy rather than by submicron photolithography processes. Devices with transconductances as high as 280 mS/mm in GaAs and 60 mS/mm (with 100-nm gate oxide) for the InP/GaInPAs MOSFET's were observed.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1984 American Institute of Physics. Received 9 April 1984; accepted 8 May 1984. This work was supported by the Office of Naval Research, the Air Force Office of Scientific Research, and the Defense Advanced Projects Agency. Z. Rav-Noy would like to acknowledge the support of the Bantrell Fellowship. |
| Subject Keywords: | FIELD EFFECT TRANSISTORS, III−V SEMICONDUCTORS, MOSFET, GATES, FABRICATION, EPITAXY, LITHOGRAPHY, GALLIUM ARSENIDES, INDIUM ARSENIDES, MESFET |
| Record Number: | CaltechAUTHORS:RAVapl84 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:RAVapl84 |
| Alternative URL: | http://dx.doi.org/10.1063/1.95204 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 10179 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 16 Apr 2008 |
| Last Modified: | 26 Dec 2012 09:57 |
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