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Si-Si1−xGex n-type resonant tunnel structures

Rajakarunanayake, Y. and McGill, T. C. (1989) Si-Si1−xGex n-type resonant tunnel structures. Applied Physics Letters, 55 (15). pp. 1537-1539. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:RAJapl89b

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Abstract

We report the first study of n-type Si-Si1−xGex resonant tunnel structures. Strain effects in these structures induce splittings of the sixfold conduction bands into twofold and fourfold states, and change the band-edge profiles considerably. We demonstrate that resonant tunneling due to twofold, fourfold, or twofold and fourfold electrons can be selectively achieved by a proper choice of the layer thicknesses and alloy concentrations in the barrier layers. The possibilities for using these phenomena for making electron filters and making accurate determinations of the band offsets are discussed.


Item Type:Article
Additional Information:Copyright © 1989 American Institute of Physics. Received 8 May 1989; accepted 4 August 1989. Parts of this work were supported by the Defense Advanced Projects Agency under contract No. N00014-K-86-0841. We would also like to acknowledge useful discussions with R.J. Hauenstein, D.H. Chow, and E.T. Yu.
Subject Keywords:SILICON, GERMANIUM SILICIDES, ENERGY GAP, STRAINS, THICKNESS, TUNNEL EFFECT, TUNNEL DIODES, EPITAXIAL LAYERS, RESONANCE, ELECTRIC CONDUCTIVITY, SEMICONDUCTOR DEVICES, BAND STRUCTURE, CONDUCTION BANDS, ENERGY−LEVEL SPLITTING
Record Number:CaltechAUTHORS:RAJapl89b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:RAJapl89b
Alternative URL:http://dx.doi.org/10.1063/1.102238
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10180
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:16 Apr 2008
Last Modified:26 Dec 2012 09:57

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