Rajakarunanayake, Y. and McGill, T. C. (1989) Si-Si1−xGex n-type resonant tunnel structures. Applied Physics Letters, 55 (15). pp. 1537-1539. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:RAJapl89b
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:RAJapl89b
We report the first study of n-type Si-Si1−xGex resonant tunnel structures. Strain effects in these structures induce splittings of the sixfold conduction bands into twofold and fourfold states, and change the band-edge profiles considerably. We demonstrate that resonant tunneling due to twofold, fourfold, or twofold and fourfold electrons can be selectively achieved by a proper choice of the layer thicknesses and alloy concentrations in the barrier layers. The possibilities for using these phenomena for making electron filters and making accurate determinations of the band offsets are discussed.
|Additional Information:||Copyright © 1989 American Institute of Physics. Received 8 May 1989; accepted 4 August 1989. Parts of this work were supported by the Defense Advanced Projects Agency under contract No. N00014-K-86-0841. We would also like to acknowledge useful discussions with R.J. Hauenstein, D.H. Chow, and E.T. Yu.|
|Subject Keywords:||SILICON, GERMANIUM SILICIDES, ENERGY GAP, STRAINS, THICKNESS, TUNNEL EFFECT, TUNNEL DIODES, EPITAXIAL LAYERS, RESONANCE, ELECTRIC CONDUCTIVITY, SEMICONDUCTOR DEVICES, BAND STRUCTURE, CONDUCTION BANDS, ENERGY−LEVEL SPLITTING|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||16 Apr 2008|
|Last Modified:||26 Dec 2012 09:57|
Repository Staff Only: item control page