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Two-band modeling of narrow band gap and interband tunneling devices

Söderström, J. R. and Yu, E. T. and Jackson, M. K. and Rajakarunanayake, Y. and McGill, T. C. (1990) Two-band modeling of narrow band gap and interband tunneling devices. Journal of Applied Physics, 68 (3). pp. 1372-1375. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:SODjap90

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Abstract

A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices.


Item Type:Article
Additional Information:Copyright © 1990 American Institute of Physics. Received 30 November 1989; accepted 2 April 1990. The authors would like to thank D. Ting for helpful discussions. This work was supported in part by the Office of Naval Research under Contract No. N00014-89-J-1141. Three of us (J.R.S., E.T.Y., and M.K.J.) would like to acknowledge financial support from the Wilhelm and Martina Lundgren Foundation, the AT&T Foundation, and the Natural Sciences and Engineering Research Council of Canada, respectively.
Subject Keywords:INDIUM ARSENIDES, ALUMINIUM ANTIMONIDES, GALLIUM ANTIMONIDES, HETEROSTRUCTURES, TUNNEL EFFECT, ENERGY GAP, INTERBAND TRANSITIONS, TRANSFER MATRIX METHOD
Record Number:CaltechAUTHORS:SODjap90
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:SODjap90
Alternative URL:http://dx.doi.org/10.1063/1.346688
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10188
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:16 Apr 2008
Last Modified:26 Dec 2012 09:57

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