Söderström, J. R. and Chow, D. H. and McGill, T. C. (1989) Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures. Applied Physics Letters, 55 (13). pp. 1348-1350. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:SODapl89b
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We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region.
|Additional Information:||Copyright © 1989 American Institute of Physics. Received 24 April 1989; accepted 19 July 1989. We acknowledge the support of the of the Air Force Office of Scientific Research under grant No. 86-0306. Two of us (JRS and DHC) are thankful for financial support from the Sweden-America Foundation and TRW, respectively.|
|Subject Keywords:||TUNNEL EFFECT, HETEROSTRUCTURES, ELECTRICAL PROPERTIES, INDIUM ARSENIDES, ALUMINIUM ANTIMONIDES, GALLIUM ANTIMONIDES, SEMICONDUCTOR DEVICES, IV CHARACTERISTICS|
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|Deposited On:||16 Apr 2008|
|Last Modified:||26 Dec 2012 09:57|
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