Söderström, J. R. and Chow, D. H. and McGill, T. C. (1989) Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures. Applied Physics Letters, 55 (13). pp. 1348-1350. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:SODapl89b
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Abstract
We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1989 American Institute of Physics. Received 24 April 1989; accepted 19 July 1989. We acknowledge the support of the of the Air Force Office of Scientific Research under grant No. 86-0306. Two of us (JRS and DHC) are thankful for financial support from the Sweden-America Foundation and TRW, respectively. |
| Subject Keywords: | TUNNEL EFFECT, HETEROSTRUCTURES, ELECTRICAL PROPERTIES, INDIUM ARSENIDES, ALUMINIUM ANTIMONIDES, GALLIUM ANTIMONIDES, SEMICONDUCTOR DEVICES, IV CHARACTERISTICS |
| Record Number: | CaltechAUTHORS:SODapl89b |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:SODapl89b |
| Alternative URL: | http://dx.doi.org/10.1063/1.101595 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 10190 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 16 Apr 2008 |
| Last Modified: | 26 Dec 2012 09:57 |
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