Rajakarunanayake, Y. and McGill, T. C. (1990) Intersubband absorption in Si1–xGex/Si superlattices for long wavelength infrared detectors. Journal of Vacuum Science and Technology B, 8 (4). pp. 929-935. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:RAJjvstb90
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We have calculated the absorption strengths for intersubband transitions in n-type Si1–xGex/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si1–xGex/Si superlattice detectors is the ability to detect normally incident light; in Ga1–xAlxAs/GaAs superlattices intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. We present detailed calculations of absorption coefficients, and peak absorption wavelengths for , , and  Si1–xGex/Si superlattices. Peak absorption strengths of about 2000–6000 cm^–1 were obtained for typical sheet doping concentrations ([approximately-equal-to]10^12 cm^–2). Absorption comparable to that in Ga1–xAlxAs/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.
|Additional Information:||© 1990 American Vacuum Society. (Received 31 January 1990; accepted 19 March 1990) This work was supported by the Defense Advanced Projects Agency, under Contract No. N00014-89-J-3196. We also like to acknowledge useful discussions with R.J. Hauenstein, E.T. Yu, R.H. Miles, and D.L. Smith.|
|Subject Keywords:||SUPERLATTICES; ABSORPTION SPECTRA; INFRARED SPECTRA; PHOTODETECTORS; BAND STRUCTURE; INTRABAND TRANSITIONS; POLARIZATION; SILICON ALLOYS; GERMANIUM ALLOYS; BINARY ALLOYS; INFRARED RADIATION; SILICON; RADIATION DETECTION|
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|Deposited On:||16 Apr 2008|
|Last Modified:||26 Dec 2012 09:57|
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