Rajakarunanayake, Y. and Miles, R. H. and Wu, G. Y. and McGill, T. C. (1988) Band structure of ZnSe-ZnTe superlattices. Physical Review B, 37 (17). pp. 10212-10215. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:RAJprb88
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We report the first study of the band structure of ZnSe-ZnTe superlattices. Our calculations are based on second order k⋅p theory and include the effects of strain and spin-orbit splitting on the superlattice band structure. Since the valence-band offset for this system is not well known, we have investigated the dependence of the superlattice band gap on the valence-band offset. Based on the assumption that the photoluminescence from the superlattice is due to an isoelectronic Te1-bound exciton in ZnSe, we have fitted the experimental photoluminescence data with k⋅p theory to obtain the best value of the valence-band offset. The value we find is 0.975±0.098 eV. Alternatively, assuming that the photoluminescence is due to band-to-band transitions we obtain a valence-band offset of 1.196±0.134 eV. We have also calculated the superlattice band gap as a function of the constituent-material-layer thicknesses for the first valence-band offset quoted. We expect these results to be important in gaining an understanding of the value of the band offset, and the nature of the photoluminescence from this system.
|Additional Information:||©1988 The American Physical Society. Received 13 October 1987. Parts of this work were supported by the U.S. Defense Advanced Research Projects Agency under Contract No. N00014-K-86-0841. We would also like to acknowledge useful discussions with J.O. McCaldin, T. Yao, P. Zampardi, and D.H. Chow.|
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|Deposited On:||16 Apr 2008|
|Last Modified:||26 Dec 2012 09:57|
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