Rajakarunanayake, Y. and McGill, T. C. (1987) Self-consistent solutions of electronic wave functions at GaAs–AlxGa1–xAs interfaces. Journal of Vacuum Science and Technology B, 5 (4). pp. 1288-1294. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:RAJjvstb87
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We report the first study of the self-consistent electronic wave functions at a heavily doped GaAs–AlxGa1–xAs interface. The doping densities in the GaAs are between 10^17 and 10^19 cm^–3. These doping densities are characteristic of tunnel structure devices. The Schrödinger equation is solved self-consistently in the Hartree approximation. Some of the more important results of our calculations include the fact that there is only a single subband level in the well for a wide range of biases. This level is also fairly loosely bound (bound by a few meV) in spite of the fact that the notch at the interface is on the order of a 100 meV. In accumulation layers, the potential at the interface is somewhat similar to the non-self-consistent one. However, in depletion layers the self-consistent potential can be substantially different from the one obtained in the Thomas–Fermi approximation.
|Additional Information:||© 1987 American Vacuum Society. (Received 23 March 1987; accepted 23 April 1987) We would like to acknowledge G.Y. Wu, T.K. Woodward, and D.H. Chow for valuable discussions. Parts of this work was supported by ONR under Contract No. N00014-84-K-0501.|
|Subject Keywords:||INTERFACE STATES; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; FERMI LEVEL; HETEROJUNCTIONS; DEPLETION LAYERS; SELF–CONSISTENT FIELD|
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|Deposited On:||16 Apr 2008|
|Last Modified:||26 Dec 2012 09:57|
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