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Strain in GaAs by low-dose ion implantation

Paine, B. M. and Hurvitz, N. N. and Speriosu, V. S. (1987) Strain in GaAs by low-dose ion implantation. Journal of Applied Physics, 61 (4). pp. 1335-1339. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:PAIjap87a

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Abstract

The production of strain in (100) GaAs by low-dose ion implantation has been investigated. Implantations were conducted at room temperature with ions of He, B, C, Ne, Si, P, and Te. Energies were between 100 and 500 keV, and each species was implanted over a range of doses sufficient to create perpendicular strain below 0.3%. The perpendicular strains epsilon [perpendicular] were measured by x-ray double-crystal diffractometry about the (400) Bragg condition. Detailed depth profiles of epsilon[perpendicular] were obtained by fitting the resulting rocking curves with a kinematic model for the diffraction. For all implantations the maximum in the epsilon[perpendicular] distribution was found approximately from the separation of the lowest-angle prominent oscillation from the substrate peak. The depth profiles of perpendicular strain had the same shape as the calculated profiles of energy deposited per ion by nuclear collisions, FD. The maximum perpendicular strains scaled linearly with the dose phi of the implanted ions for all ion species. Also the ratio of maximum strain to dose was found to vary linearly with FD over more than 2 orders of magnitude in FD. We therefore conclude that epsilon[perpendicular]=KphiFD at all depths, where K is a constant. The value of K was found to be (5±1)×10^−2 Å^3/eV. Our results suggest that this holds for any ion species in the mass range 4–128 amu, with energy in the hundreds of keV, implanted into (100) GaAs at room temperature, provided the maximum strain is less than 0.3%.


Item Type:Article
Additional Information:Copyright © 1987 American Institute of Physics. Received 2 June 1986; accepted 10 October 1986. We are grateful to R.S. Averback and L.J. Thompson at Argonne National Laboratory for running the TRIM calculation. We also thank M-A. Nicolet of Caltech and P.M. Asbeck of Rockwell International for their interest and encouragement. This work was supported financially by the Defense Advanced Research Projects Agency (Grant No. MDA 903-82-C-0348) and the National Science Foundation Materials Research Program (Grant No. DMR-8421119). One of us (N.N.H.) acknowledges the support of Caltech's Summer Undergraduate Research Fellowship program.
Subject Keywords:OSCILLATIONS, PHYSICAL RADIATION EFFECTS, GALLIUM ARSENIDES, ION IMPLANTATION, HELIUM IONS, BORON IONS, CARBON IONS, NEON IONS, SILICON IONS, PHOSPHORUS IONS, TELLURIUM IONS, X−RAY DIFFRACTION, STRAINS, KEV RANGE 100−1000
Record Number:CaltechAUTHORS:PAIjap87a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:PAIjap87a
Alternative URL:http://dx.doi.org/10.1063/1.338112
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10209
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:16 Apr 2008
Last Modified:26 Dec 2012 09:58

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