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X-ray study of low-temperature annealed arsenic-implanted silicon

Nemiroff, M. and Speriosu, V. S. (1985) X-ray study of low-temperature annealed arsenic-implanted silicon. Journal of Applied Physics, 58 (10). pp. 3735-3738. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:NEMjap85

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Abstract

Low-temperature anneals (500–650 °C) of 2, 4, and 8×10^15 cm^−2 As+ implanted in <100> silicon at 50 keV were studied by x-ray double crystal diffraction. The rocking curves were analyzed by a kinematical model. Two regions of strain were found in the solid-phase epitaxially regrown layer. One layer was uniform and positively strained. The other was nonuniform and negatively strained. By comparing rocking curves of repeatedly etched layers it was found that the surface layer is negatively strained, corresponding largely to the substitutional As in the regrown layer. The positively strained region lies at the interface between the implanted layer and the undamaged silicon substrate.


Item Type:Article
Additional Information:Copyright © 1985 American Institute of Physics. Received 18 March 1985; accepted 29 July 1985. One of the authors (MN) would like to thank Ron Lindley and Julie Gieser for the implants and anneals, Steve Gonzalez for the sputter etches, and Pat Cristarella for the rocking curves.
Subject Keywords:ANNEALING, X−RAY DIFFRACTION, SILICON, KINEMATICS, SURFACE LAYERS, EPITAXY, INTERFACES, ARSENIC IONS, SOLID−PHASE EPITAXY, ETCHING, ION IMPLANTATION
Record Number:CaltechAUTHORS:NEMjap85
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:NEMjap85
Alternative URL:http://dx.doi.org/10.1063/1.335638
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10212
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:16 Apr 2008
Last Modified:26 Dec 2012 09:58

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