Gronet, Chris M. and Lewis, Nathan S. (1983) n-type GaAs photoanodes in acetonitrile: Design of a 10.0% efficient photoelectrode. Applied Physics Letters, 43 (1). pp. 115-117. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:GROapl83
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n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm^2 at 88 mW/cm^2 of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0%±0.5% for conversion of natural sunlight (65 mW/cm^2) to electricity, with open circuit voltages Voc of 0.70–0.72 V, short circuit currents of 16–17 mA/cm^2, and fill factors of 0.52–0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.
|Additional Information:||Copyright © 1983 American Institute of Physics. Received 10 January 1983; accepted 13 April 1983. We thank G. Cogan, J. Gibbons, and G. Moddel of SERA Corp., Santa Clara, CA for many helpful discussions and for the use of evaporation facilities.|
|Subject Keywords:||gallium arsenide solar cells, photoanodes, n−type conductors, nitriles, organic compounds, efficiency, electrodes, radiation effects, liquids, junctions, ferrocene, redox reactions, electron−hole coupling, recombination, charge carriers, length, electric currents, current density, electrolytes|
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|Deposited On:||23 Apr 2008|
|Last Modified:||26 Dec 2012 09:59|
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