McCormack, J. A. and Fleurial, Jean-Pierre (1991) Electrical characterization Of SiGe thin films. In: Modern perspectives on thermoelectrics and related materials : symposium held May 1-2, 1991, Anaheim, California. Materials Research Society Symposia Proceedings. No.234. Materials Research Society , Pittsburgh, PA, pp. 135-143. ISBN 9781558991286 http://resolver.caltech.edu/CaltechAUTHORS:jsmrssp91
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An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus.
|Item Type:||Book Section|
|Additional Information:||This manuscript published as a conference proceedings: Conference Information: Modern Perspectives on Thermoelectrics and Related Materials Symposium, Location: Anaheim, CA USA Source: Modern Perspectives on Thermoelectrics and Related Materials Symposium Pages: 135-43 Published: 1991. McCormack, J. A.; Fleurial, J. P. Mater. Res. Soc. Symp. Proc. 1991, 234, 135. This work was carried out at the Jet Propulsion Laboratory/ California Institute of Technology, under contract with the National Aeronautics and Space Administration.|
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|Deposited By:||Jeff Snyder|
|Deposited On:||01 May 2008|
|Last Modified:||26 Dec 2012 09:59|
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