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Electronic structure of amorphous Mo-Ru-Si alloys

Tenhover, M. and Lukco, D. and Surman, D. and Johnson, W. L. (1985) Electronic structure of amorphous Mo-Ru-Si alloys. Journal of Applied Physics, 57 (1). pp. 3200-3202. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:TENjap85

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Abstract

The results of x-ray photoemission spectroscopy (XPS) and electrical resistivity measurements on amorphous metal alloys of the form (Mo1−xRux)80Si20 are reported. The XPS valence band spectra are dominated by the Mo-4d subbands and the electronic structure of the amorphous alloys can best be described in the virtual crystal limit of the coherent potential approximation (CPA) formalism. The density of electronic states at the Fermi level sharply decreases in the alloys as the Ru/Mo ratio is increased. Associated with this drop is an increase in electrical resistivity and decrease in the superconducting transition temperatures of the alloys. These relationships are discussed in the context of current theories of the electrical resistivity and superconductivity in amorphous alloys.


Item Type:Article
Additional Information:Copyright © 1985 American Institute of Physics.
Subject Keywords:ENERGY−LEVEL DENSITY, METALLIC GLASSES, MOLYBDENUM ALLOYS, SILICON ALLOYS, RUTHENIUM ALLOYS, FERMI LEVEL, ELECTRIC CONDUCTIVITY, SUPERCONDUCTIVITY, ELECTRONIC STRUCTURE, PHOTOEMISSION, PHOTOELECTRON SPECTROSCOPY, VALENCE, TRANSITION TEMPERATURE, THIN FILMS
Record Number:CaltechAUTHORS:TENjap85
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TENjap85
Alternative URL:http://dx.doi.org/10.1063/1.335149
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10388
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:01 May 2008
Last Modified:26 Dec 2012 10:00

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