Tenhover, M. and Lukco, D. and Surman, D. and Johnson, W. L. (1985) Electronic structure of amorphous Mo-Ru-Si alloys. Journal of Applied Physics, 57 (1). pp. 3200-3202. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:TENjap85
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:TENjap85
The results of x-ray photoemission spectroscopy (XPS) and electrical resistivity measurements on amorphous metal alloys of the form (Mo1−xRux)80Si20 are reported. The XPS valence band spectra are dominated by the Mo-4d subbands and the electronic structure of the amorphous alloys can best be described in the virtual crystal limit of the coherent potential approximation (CPA) formalism. The density of electronic states at the Fermi level sharply decreases in the alloys as the Ru/Mo ratio is increased. Associated with this drop is an increase in electrical resistivity and decrease in the superconducting transition temperatures of the alloys. These relationships are discussed in the context of current theories of the electrical resistivity and superconductivity in amorphous alloys.
|Additional Information:||Copyright © 1985 American Institute of Physics.|
|Subject Keywords:||ENERGY−LEVEL DENSITY, METALLIC GLASSES, MOLYBDENUM ALLOYS, SILICON ALLOYS, RUTHENIUM ALLOYS, FERMI LEVEL, ELECTRIC CONDUCTIVITY, SUPERCONDUCTIVITY, ELECTRONIC STRUCTURE, PHOTOEMISSION, PHOTOELECTRON SPECTROSCOPY, VALENCE, TRANSITION TEMPERATURE, THIN FILMS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||01 May 2008|
|Last Modified:||26 Dec 2012 10:00|
Repository Staff Only: item control page