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Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence

Zarem, H. A. and Sercel, P. C. and Lebens, J. A. and Eng, L. E. and Yariv, A. and Vahala, K. J. (1989) Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence. Applied Physics Letters, 55 (16). pp. 1647-1649. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:ZARapl89a

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Abstract

A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, Al0.21Ga0.79As, and Al0.37Ga0.63As. A large increase in the diffusion length is found for Al0.37Ga0.63As and is attributed to an order of magnitude increase in lifetime.


Item Type:Article
Additional Information:© 1989 American Institute of Physics. Received 21 April 1989; accepted 4 August 1989. The authors would like to acknowledge the support of the Office of Naval Research and the Strategic Defense Initiative Organization/Innovative Science and Technology. One of us (PS) would like to acknowledge the support of a graduate National Science Foundation fellowship.
Record Number:CaltechAUTHORS:ZARapl89a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:ZARapl89a
Alternative URL:http://dx.doi.org/10.1063/1.102226
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10395
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:02 May 2008
Last Modified:26 Dec 2012 10:00

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