Zarem, H. A. and Sercel, P. C. and Lebens, J. A. and Eng, L. E. and Yariv, A. and Vahala, K. J. (1989) Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence. Applied Physics Letters, 55 (16). pp. 1647-1649. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:ZARapl89a
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Abstract
A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, Al0.21Ga0.79As, and Al0.37Ga0.63As. A large increase in the diffusion length is found for Al0.37Ga0.63As and is attributed to an order of magnitude increase in lifetime.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1989 American Institute of Physics. Received 21 April 1989; accepted 4 August 1989. The authors would like to acknowledge the support of the Office of Naval Research and the Strategic Defense Initiative Organization/Innovative Science and Technology. One of us (PS) would like to acknowledge the support of a graduate National Science Foundation fellowship. |
| Record Number: | CaltechAUTHORS:ZARapl89a |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:ZARapl89a |
| Alternative URL: | http://dx.doi.org/10.1063/1.102226 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 10395 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Tony Diaz |
| Deposited On: | 02 May 2008 |
| Last Modified: | 26 Dec 2012 10:00 |
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