Zarem, H. A. and Lebens, J. A. and Nordstrom, K. B. and Sercel, P. C. and Sanders, S. and Eng, L. E. and Yariv, A. and Vahala, K. J. (1989) Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs. Applied Physics Letters, 55 (25). pp. 2622-2624. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:ZARapl89b
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Abstract
The ambipolar diffusion length and carrier lifetime are measured in AlxGa1−xAs for several mole fractions in the interval 0<x<0.38. These parameters are found to have significantly higher values in the higher mole fraction samples. These increases are attributed to occupation of states in the indirect valleys, and supporting calculations are presented.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1989 American Institute of Physics. Received 15 September 1989; accepted 20 October 1989. The authors would like to acknowledge the support of the Office of Naval Research, the National Science Foundation (NSF), and the SDIO-ISTC. Two of us (PS and SS) would like to acknowledge the support of a graduate NSF fellowship. |
| Record Number: | CaltechAUTHORS:ZARapl89b |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:ZARapl89b |
| Alternative URL: | http://dx.doi.org/10.1063/1.101955 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 10398 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Tony Diaz |
| Deposited On: | 02 May 2008 |
| Last Modified: | 26 Dec 2012 10:00 |
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