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Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well

Zarem, Hal A. and Sercel, Peter C. and Hoenk, Michael E. and Lebens, John A. and Vahala, Kerry J. (1989) Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well. Applied Physics Letters, 54 (26). pp. 2692-2694. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:ZARapl89c

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Abstract

A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nanometer scale wire structures. Spectrally resolved cathodoluminescence images of the structures are presented as well as local spectra of cathodoluminescence emission from the structures. Blue shifting of the luminescence from the wire structures is observed.


Item Type:Article
Additional Information:© 1989 American Institute of Physics. Received 28 November 1988; accepted 19 April 1989. The authors would like to thank Professor Amnon Yariv for supplying the MBE samples used in this work. This work was supported by the Office of Naval Research and SDIO-ISTC. One of us (P.S.) would like to acknowledge support under a NSF Graduate Fellowship.
Record Number:CaltechAUTHORS:ZARapl89c
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:ZARapl89c
Alternative URL:http://dx.doi.org/10.1063/1.101037
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10403
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:02 May 2008
Last Modified:26 Dec 2012 10:00

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