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Band offsets, defects, and dipole layers in semiconductor heterojunctions

Zur, A. and McGill, T. C. (1984) Band offsets, defects, and dipole layers in semiconductor heterojunctions. Journal of Vacuum Science and Technology B, 2 (3). pp. 440-444. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:ZURjvstb84

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Abstract

The role of defects in heterojunctions was investigated. The density of such defects required to pin the Fermi level or to affect the band offset was estimated using simple electrostatic considerations. We conclude that it is very unlikely that defects play any role in determining the band offsets, but they might affect the Fermi-level position at the interface.


Item Type:Article
Additional Information:© 1984 American Vacuum Society. (Received 13 March 1984; accepted 17 April 1984) Work supported in part by the Office of Naval Research under Naval Contract No. N-00014-82-K-0556.
Subject Keywords:HETEROJUNCTIONS; CRYSTAL DEFECTS; INTERFACES; DEPLETION LAYERS; PINNING; BAND STRUCTURE; INTERFACE PHENOMENA; SPECTRAL SHIFT; FERMI LEVEL; LAYERS; ELECTRIC DIPOLES; SEMICONDUCTOR MATERIALS
Record Number:CaltechAUTHORS:ZURjvstb84
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:ZURjvstb84
Alternative URL:http://dx.doi.org/10.1116/1.582891
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10412
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:02 May 2008
Last Modified:26 Dec 2012 10:00

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