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Core to surface excitations on GaAs(110)

Swarts, C. A. and Goddard, W. A., III and McGill, T. C. (1981) Core to surface excitations on GaAs(110). Journal of Vacuum Science and Technology, 19 (3). pp. 360-366. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:SWAjvst81b

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Abstract

We have carried out ab initio calculations of surface core excitations on finite cluster models of the GaAs(110) surface. For the Ga core excitation we find a localized excited state involving excitation into the empty Ga-4p orbital and bound with respect to the conduction band minimum (CBM) by 0.7 eV. This is in reasonable agreement with experiment (binding energy >~0.8 eV). This transition, which is not analogous to bulk core excitations, is termed a core surfaston to emphasize the character of the state. We find that the As core surfaston is above the CBM by 1.0 eV and hence should be difficult to observe.


Item Type:Article
Additional Information:© 1981 American Vacuum Society. (Received 9 March 1981; accepted 18 May 1981) Supported by a contract from the Office of Naval Research (No. N00014-79-C-0797). Arthur Amos Noyes Laboratory of Chemical Physics, Contribution No. 6402.
Subject Keywords:GALLIUM ARSENIDES; SURFACES; ELECTRONIC STRUCTURE; EXCITATION; SOLID CLUSTERS; GALLIUM; ORBITAL CALCULATIONS; CONDUCTION BANDS; EXCITONS
Record Number:CaltechAUTHORS:SWAjvst81b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:SWAjvst81b
Alternative URL:http://dx.doi.org/10.1116/1.571064
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10421
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:03 May 2008
Last Modified:26 Dec 2012 10:00

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