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Be-implanted (GaAl)As stripe geometry lasers

Bar-Chaim, N. and Lanir, M. and Margalit, S. and Ury, I. and Wilt, D. and Yust, M. and Yariv, A. (1980) Be-implanted (GaAl)As stripe geometry lasers. Applied Physics Letters, 36 (4). pp. 233-235. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BARapl80

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Abstract

GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%.


Item Type:Article
Additional Information:Copyright © 1980 American Institute of Physics. (Received 27 September 1979; accepted for publication 28 November 1979) The authors would like to thank Pat Koen of the California Institute of Technology for the SEM photomicrograph. This work was supported by the Office of Naval Research and the National Science Foundation.
Subject Keywords:SEMICONDUCTOR LASERS, ION IMPLANTATION, GALLIUM ARSENIDES, ALUMINUM ARSENIDES, GEOMETRY, BERYLIUM IONS, FABRICATION, DATA, PULSES, ELECTRIC CURRENTS, VISIBLE RADIATION, EFFICIENCY
Record Number:CaltechAUTHORS:BARapl80
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BARapl80
Alternative URL:http://dx.doi.org/10.1063/1.91457
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10605
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:21 May 2008
Last Modified:26 Dec 2012 10:03

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