Bartur, M. and Nicolet, M-A. (1982) Thermal oxidation of nickel disilicide. Applied Physics Letters, 40 (2). pp. 175-177. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BARapl82a
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The thermal oxidation characteristics of nickel disilicide on Si substrates have been investigated in the temperature range of 700–900 °C in dry oxygen and wet oxygen. A surface layer of SiO2 grows parabolically in time. The growth rate is independent on the crystalline structure (epitaxial or polycrystalline) and thickness of the NiSi2 layer. We surmise that the oxidation mechanism is dominated by oxygen diffusion through the growing SiO2. Activation energies for the dry and wet oxidation are 1.0±0.1 eV and 1.5±0.1 eV, respectively. NiSi2 layers on SiO2 oxidize with the same rate—resulting with progressively Ni-rich NiSi2. Preliminary measurements of the oxide quality yield dielectric strength of 2.1×10^6 V cm^−1, and a pinhole density of about 100 per cm2. A survey of oxidation data for Si and other refractory metal silicides shows that their oxidation does not draw similar kinetics to that of NiSi2.
|Additional Information:||Copyright © 1982 American Institute of Physics. (Received 24 July 1981; accepted for publication 9 October 1981) The authors wish to thank R. Gorris and R. Fernandez for technical assistance. The work was executed under the U.R. Fund of the Böhmische Physical Society (B.M. Ullrich). Partial financial support by Solid States Devices, Inc. (A. Applebaum, President) is thankfully acknowledged as well.|
|Subject Keywords:||NICKEL SILICIDES, OXIDATION, DATA, HIGH TEMPERATURE, VERY HIGH TEMPERATURE, SUBSTRATES, OXYGEN, MOISTURE, COMPARATIVE EVALUATIONS, SILICON OXIDES, TIME DEPENDENCE, CRYSTAL STRUCTURE, EPITAXY, POLYCRYSTALS, THICKNESS, ACTIVATION ENERGY, MATHEMATICAL MODELS, DIELECTRIC PROPERTIES, KINETICS|
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|Deposited On:||21 May 2008|
|Last Modified:||26 Dec 2012 10:03|
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