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Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

Bar-Chaim, N. and Harder, Ch. and Katz, J. and Margalit, S. and Yariv, A. and Ury, I. (1982) Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor. Applied Physics Letters, 40 (7). pp. 556-557. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BARapl82b

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Abstract

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100–400 and light responsivity of 75 A/W (for wavelengths of 0.82 µm) at collector current levels of 15 mA were obtained.


Item Type:Article
Additional Information:Copyright © 1982 American Institute of Physics. (Received 23 November 1981; accepted for publication 4 January 1982) This work was supported by the Defense Advanced Research Projects Agency.
Subject Keywords:INTEGRATED CIRCUITS, SEMICONDUCTOR LASERS, PHOTOTRANSISTORS, HETEROJUNCTIONS, DATA, FABRICATION, RECRYSTALLIZATION, RESPONSE FUNCTIONS, CONFIGURATION
Record Number:CaltechAUTHORS:BARapl82b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BARapl82b
Alternative URL:http://dx.doi.org/10.1063/1.93177
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10609
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:21 May 2008
Last Modified:26 Dec 2012 10:03

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