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Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser

Yi, M. B. and Lu, L. T. and Kapon, E. and Rav-Noy, Z. and Margalit, S. and Yariv, A. (1985) Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser. Applied Physics Letters, 46 (4). pp. 328-330. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:YIMapl85

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Abstract

A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2-µm-wide active region.


Item Type:Article
Additional Information:Copyright © 1985 American Institute of Physics. Received 22 October 1984; accepted 4 December 1984. The research discussed in this paper is supported by the National Science Foundation and the Office of Naval Research and the Air Force Office of Scientific Research. The authors wish to thank T. Venkatesan of Bell Laboratories for taking the SEM picture.
Subject Keywords:FABRICATION, SEMICONDUCTOR LASERS, HETEROJUNCTIONS, LIQUID PHASE EPITAXY, CADMIUM, INDIUM PHOSPHIDES, GALLIUM PHOSPHIDES, GALLIUM ARSENIDES, INDIUM ARSENIDES, THRESHOLD CURRENT, EXPERIMENTAL DATA, BURIED HETEROSTRUCTURES
Record Number:CaltechAUTHORS:YIMapl85
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:YIMapl85
Alternative URL:http://dx.doi.org/10.1063/1.95620
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10632
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:22 May 2008
Last Modified:26 Dec 2012 10:03

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