Van Rossum, M. and Cheng, Y-T. and Nicolet, M-A. and Johnson, W. L. (1985) Correlation between cohesive energy and mixing rate in ion mixing of metallic bilayers. Applied Physics Letters, 46 (6). pp. 610-612. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:ROSapl85
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We have compared the mixing rate of several 5d-4d metal bilayers which form ideal solutions. We observe a strong correlation between the mixing rate and the average cohesive energy of each bilayer. A model based on the thermal spike concept is proposed to explain this behavior. The model leads to a general expression describing mixing rates in metallic bilayers.
|Additional Information:||Copyright © 1985 American Institute of Physics. Received 29 October 1984; accepted 4 January 1985. The authors would like to thank A. Ghaffari (Caltech) for sample preparation, and Dr. S.S. Lau and Dr. D.M. Scott (University of California at San Diego) for use of their RBS equipment. The authors would like to thank the Department of Energy for partial support under Project Agreement NO. DE-AT03-81ER10870 under contract No. DE-AM03-76F00767 and the Office of Naval Research for partial support under contract No. N00014-84-K-0275. One of the authors (MVR) also acknowledges the IBM Corporation for support.|
|Subject Keywords:||LAYERS, MIXING, D STATES, F STATES, METALS, ADHESION, THIN FILMS, VACUUM EVAPORATION, XENON IONS, KEV RANGE 100−1000, DIFFUSION, ATOM TRANSPORT, ION COLLISIONS, SILICON, SPUTTERING, BILAYERS|
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|Deposited On:||03 Jun 2008|
|Last Modified:||26 Dec 2012 10:03|
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