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Low-temperature measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing

Newkirk, Michael A. and Vahala, Kerry J. (1989) Low-temperature measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing. Applied Physics Letters, 54 (7). pp. 600-602. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:NEWapl89a

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Abstract

We use the active-layer photomixing technique to directly modulate the output of a GaAs semiconductor laser operating at temperatures as low as 4.2 K. The technique produces modulation with nearly perfect immunity to device parasitic effects, revealing the laser diode's intrinsic modulation response. At 4.2 K the parasitic corner frequency is estimated to be 410 MHz, yet the response appears ideal out to 15 GHz. We measure the dynamical parameters governing the response function, the relaxation resonance frequency, and the damping rate, and discuss their low-temperature behavior.


Item Type:Article
Additional Information:© 1989 American Institute of Physics. Received 7 October 1988; accepted 4 December 1988. This work is supported by the National Science Foundation, the Powell Foundation, and ATT Corporation. One of us (MAN) is grateful for financial support from IBM Corporation.
Record Number:CaltechAUTHORS:NEWapl89a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:NEWapl89a
Alternative URL:http://dx.doi.org/10.1063/1.100890
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10721
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:06 Jun 2008
Last Modified:26 Dec 2012 10:04

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