Chiu, L. C. and Yu, K. L. and Margalit, S. and Chen, T. R. and Koren, U. and Hasson, A. and Yariv, Amnon (1983) Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions. IEEE Journal of Quantum Electronics, 19 (9). pp. 1335-1338. ISSN 0018-9197. http://resolver.caltech.edu/CaltechAUTHORS:CHIieeejqe83
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A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.
|Additional Information:||© Copyright 1983 IEEE. Reprinted with permission. Manuscript received December 16, 1982; revised April 5, 1983. This work was supported by the U.S. Office of Naval Research and the National Science Foundation.|
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|Deposited On:||05 Jun 2008|
|Last Modified:||26 Dec 2012 10:04|
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