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Structural and compositional control of the output wavelength of very high power 0.98 µm GaInAs lasers for pumping fiber amplifiers

Chen, T. R. and Zhuang, Y. H. and Marshall, W. K. and Xu, Y. J. and Yariv, A. (1991) Structural and compositional control of the output wavelength of very high power 0.98 µm GaInAs lasers for pumping fiber amplifiers. IEEE Photonics Technology Letters, 3 (8). pp. 694-696. ISSN 1041-1135. http://resolver.caltech.edu/CaltechAUTHORS:CHEieeeptl91

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Abstract

The authors report on the design, fabrication, and characterization of high-power strained-layer (SL) InGaAs single-quantum-well (SQW) lasers. The lasers emit a 0.980 µm. They deliver over 100 mW CW optical power at room temperature in a stable single lateral mode. The maximum CW output power measured is 265 mW. The lasers have been successfully used as pump sources for an erbium-doped fiber amplifier.


Item Type:Article
Additional Information:© Copyright 1991 IEEE. Reprinted with permission. Manuscript received April 22, 1991. This work was supported by Defense Advanced Research Projects Agency (DARPA) and the Office of Naval Research (ONR).
Subject Keywords:III-V semiconductors, fiber lasers, gallium arsenide, indium compounds, laser transitions, optical pumping, semiconductor junction lasers
Record Number:CaltechAUTHORS:CHEieeeptl91
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEieeeptl91
Alternative URL:http://dx.doi.org/10.1109/68.84455
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1081
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:24 Sep 2007
Last Modified:21 Oct 2013 23:11

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