Chen, T. R. and Zhuang, Y. H. and Marshall, W. K. and Xu, Y. J. and Yariv, A. (1991) Structural and compositional control of the output wavelength of very high power 0.98 µm GaInAs lasers for pumping fiber amplifiers. IEEE Photonics Technology Letters, 3 (8). pp. 694-696. ISSN 1041-1135. http://resolver.caltech.edu/CaltechAUTHORS:CHEieeeptl91
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The authors report on the design, fabrication, and characterization of high-power strained-layer (SL) InGaAs single-quantum-well (SQW) lasers. The lasers emit a 0.980 µm. They deliver over 100 mW CW optical power at room temperature in a stable single lateral mode. The maximum CW output power measured is 265 mW. The lasers have been successfully used as pump sources for an erbium-doped fiber amplifier.
|Additional Information:||© Copyright 1991 IEEE. Reprinted with permission. Manuscript received April 22, 1991. This work was supported by Defense Advanced Research Projects Agency (DARPA) and the Office of Naval Research (ONR).|
|Subject Keywords:||III-V semiconductors, fiber lasers, gallium arsenide, indium compounds, laser transitions, optical pumping, semiconductor junction lasers|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||24 Sep 2007|
|Last Modified:||21 Oct 2013 23:11|
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