Zhao, X.-A. and Kolawa, E. and Nicolet, M-A. (1986) Reaction of thin metal films with crystalline and amorphous Al2O3. Journal of Vacuum Science and Technology A, 4 (6). pp. 3139-3141. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:ZHAjvsta86
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We have investigated the thermal reaction between thin transition metal films and sapphire, alumina or amorphous Al2O3 using backscattering spectrometry and x-ray diffraction. Thin films of Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Pt were deposited on the substrates by rf sputtering in an Ar gas ambient. The samples were subsequently annealed in vacuum at 800–900 °C for 20 min to 4 h duration. We found that only films of Y, Ti, and Hf react, regardless of the type of substrate, by forming aluminides near the substrate and oxides on the surface. The other metal films do not react with the Al2O3 substrates. Our results agree with thermodynamic consideration based on the heats of reactions between metals and Al2O3.
|Additional Information:||© 1986 American Vacuum Society. (Received 11 April 1986; accepted 30 May 1986) We wish to thank T.C. Banwell for his helpful discussion and the deposited Al2O3 samples which were provided by T.M. Reith (IBM/GPD, Tucso), and A. Collinwood for typing the manuscript. This work was financially supported in part by the Army Research Office under contract No. DAAG29-85-K-0l92 and by the Office of Naval Research under contract No. N00014-84-K-0275.|
|Subject Keywords:||ALUMINIUM OXIDES; SAPPHIRE; BACKSCATTERING; X–RAY DIFFRACTION; ANNEALING; VERY HIGH TEMPERATURE; YTTRIUM; TITANIUM; ZIRCONIUM; HAFNIUM; VANADIUM; NIOBIUM; TANTALUM; CHROMIUM; MOLYBDENUM; TUNGSTEN; PLATINUM; ARGON; SPUTTERING; REACTION HEAT; ALUMINIUM COMPOUNDS; FILMS; YTTRIUM COMPOUNDS; TITANIUM COMPOUNDS; HAFNIUM COMPOUNDS; CHEMICAL REACTION YIELD; CHEMICAL REACTIONS; THIN FILMS; SURFACE REACTIONS|
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|Deposited On:||12 Jun 2008|
|Last Modified:||26 Dec 2012 10:05|
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