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Band structure effects in interband tunnel devices

Ting, D. Z.-Y. and Yu, E. T. and McGill, T. C. (1991) Band structure effects in interband tunnel devices. Journal of Vacuum Science and Technology B, 9 (4). pp. 2405-2410. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91

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Abstract

We report on a calculation of transport in InAs/GaSb/AlSb-based interband tunnel structures using a realistic band structure model. The results are compared with calculations using a two-band model which includes only the lowest conduction band and the light-hole band. We find that for device structures containing GaSb quantum wells, the inclusion of heavy-hole states can introduce additional transmission resonances and substantial hole-mixing effects. These effects are found to have a significant influence on the current–voltage characteristics of interband devices.


Item Type:Article
Additional Information:© 1991 American Vacuum Society. (Received 29 January 1991; accepted 8 April 1991) The authors would like to thank W.R. Frensley, C.S. Lent, Y.C. Chang, and J.N. Schulman for helpful discussions. One of us (E.T.Y.) would like to acknowledge financial support from the AT&T Foundation. This work is supported by the Office of Naval Research (ONR) under Grant No. N00014-89-J-1141.
Subject Keywords:INDIUM ARSENIDES; GALLIUM ANTIMONIDES; ALUMINIUM ANTIMONIDES; HETEROJUNCTIONS; TUNNEL EFFECT; INTERBAND TRANSITIONS; BAND STRUCTURE; QUANTUM WELL STRUCTURES; HOLES
Record Number:CaltechAUTHORS:TINjvstb91
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91
Alternative URL:http://dx.doi.org/10.1116/1.585711
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10838
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:12 Jun 2008
Last Modified:26 Dec 2012 10:05

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