Ting, D. Z.-Y. and McGill, T. C. (1989) X-point tunneling in AlAs–GaAs–AlAs double barrier heterostructures. Journal of Vacuum Science and Technology B, 7 (4). pp. 1031-1034. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:TINjvstb89
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The dynamics of X-point tunneling in AlAs–GaAs–AlAs double barrier heterostructures is studied with numerical simulation. The problem is formulated within the framework of the one-band Wannier orbital model which allows for simultaneous descriptions of the Gamma-point double barrier profile and the X-point double well profile in this heterostructure. Time dependences of the following processes are illustrated: (i) resonant tunneling of Gamma-valley electron packets via the X-point quantum well states localized in the AlAs layers, (ii) nonresonant tunneling of Gamma-electron packets (with energy below the AlAs Gamma-point barrier) through the X-point continuum states, and (3) resonant tunneling via Gamma-X mixed quantum well states localized in both the GaAs Gamma-point quantum well and the AlAs X-point double quantum well. In addition, the effects of X-point tunneling on the escape times of electrons localized in the GaAs quantum wells are examined.
|Additional Information:||© 1989 American Vacuum Society. (Received 7 April 1989; accepted 14 April 1989) The authors would like to thank M.K. Jackson, D.H. Chow, and E.T. Yu for helpful discussions. This work is supported by the U.S. Office of Naval Research (ONR) under Grant No. N00014-89-J-1141.|
|Subject Keywords:||ALUMINUM ARSENIDES; GALLIUM ARSENIDES; LAYERED MATERIALS; HETEROSTRUCTURES; TUNNEL EFFECT; NUMERICAL SOLUTION; SIMULATION; BARRIER HEIGHT; TIME DEPENDENCE; RESONANCE; BAND STRUCTURE; MATHEMATICAL MODELS|
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|Deposited On:||12 Jun 2008|
|Last Modified:||26 Dec 2012 10:05|
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