Ting, D. Z.-Y. and McGill, T. C. (1992) Effect of Gamma–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures. Journal of Vacuum Science and Technology B, 10 (4). pp. 1980-1983. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:TINjvstb92
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The effect of Gamma–X mixing on electron tunneling time in GaAs/AlAs symmetric double barrier heterostructures is studied theoretically using an empirical tight-binding band structure model. It is found that the Gamma quasibound state tunneling times can be shortened or lengthened by Gamma–X mixing, depending on whether the AlAs barriers consist of an even or odd number of monolayers. This is attributed to the interference between the Gamma and X conduction channels in the AlAs barriers.
|Additional Information:||© 1992 American Vacuum Society. (Received 28 January 1992; accepted 13 March 1992) The authors would like to thank M.K. Jackson and J.N. Schulman for helpful discussions. This work is supported by the Office of Naval Research (ONR) under Grant No. N00014-89-J-1141.|
|Subject Keywords:||HETEROSTRUCTURES; GALLIUM ARSENIDES; ALUMINUM ARSENIDES; ELECTRONIC STRUCTURE; TUNNEL EFFECT; TIGHT BINDING APPROXIMATION; LIFETIME; NUMERICAL ANALYSIS|
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|Deposited By:||Archive Administrator|
|Deposited On:||12 Jun 2008|
|Last Modified:||26 Dec 2012 10:05|
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