CaltechAUTHORS
  A Caltech Library Service

Effect of Gamma–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures

Ting, D. Z.-Y. and McGill, T. C. (1992) Effect of Gamma–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures. Journal of Vacuum Science and Technology B, 10 (4). pp. 1980-1983. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:TINjvstb92

[img]
Preview
PDF
See Usage Policy.

457Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:TINjvstb92

Abstract

The effect of Gamma–X mixing on electron tunneling time in GaAs/AlAs symmetric double barrier heterostructures is studied theoretically using an empirical tight-binding band structure model. It is found that the Gamma quasibound state tunneling times can be shortened or lengthened by Gamma–X mixing, depending on whether the AlAs barriers consist of an even or odd number of monolayers. This is attributed to the interference between the Gamma and X conduction channels in the AlAs barriers.


Item Type:Article
Additional Information:© 1992 American Vacuum Society. (Received 28 January 1992; accepted 13 March 1992) The authors would like to thank M.K. Jackson and J.N. Schulman for helpful discussions. This work is supported by the Office of Naval Research (ONR) under Grant No. N00014-89-J-1141.
Subject Keywords:HETEROSTRUCTURES; GALLIUM ARSENIDES; ALUMINUM ARSENIDES; ELECTRONIC STRUCTURE; TUNNEL EFFECT; TIGHT BINDING APPROXIMATION; LIFETIME; NUMERICAL ANALYSIS
Record Number:CaltechAUTHORS:TINjvstb92
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TINjvstb92
Alternative URL:http://dx.doi.org/10.1116/1.586170
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10841
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:12 Jun 2008
Last Modified:26 Dec 2012 10:05

Repository Staff Only: item control page