Cheung, N. W. and von Seefeld, H. and Nicolet, M-A. and Ho, F. and Iles, P. (1981) Thermal stability of titanium nitride for shallow junction solar cell contacts. Journal of Applied Physics, 52 (6). pp. 4297-4299. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:CHEjap81
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Abstract
To demonstrate the thermal stability of titanium nitride as a high-temperature diffusion barrier, the TiN-Ti-Ag metallization scheme has been tested on shallow-junction (~2000 Å) Si solar cells. Electrical measurements on reference samples with the Ti-Ag metallization scheme show serious degradation after a 600 °C, 10-min annealing. With the TiN-Ti-Ag scheme, no degradation of cell performance is observed after the same heat treatment if the TiN layer is >~1700 Å. The glass encapsulation of cells by electrostatic bonding requires such a heat treatment.
| Item Type: | Article |
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| Additional Information: | Copyright © 1981 American Institute of Physics. (Received 18 September 1980; accepted for publication 1 March 1981) At Caltech, this work was supported in part by the Department of Energy and monitored by Sandia Laboratories, Albuquerque, New Mexico (H.T. Weaver and M.B. Chamberlain). |
| Subject Keywords: | ELECTRIC CONTACTS, STABILITY, TEMPERATURE EFFECTS, TITANIUM NITRIDES, JUNCTIONS, SOLAR CELLS, THICKNESS, DIFFUSION, HEAT TREATMENTS, SILVER, METALLIZATION, EXPERIMENTAL DATA, ELECTRICAL PROPERTIES, THERMAL DEGRADATION, HIGH TEMPERATURE, ANNEALING, GLASS, ENCAPUSLATION, BONDING |
| Record Number: | CaltechAUTHORS:CHEjap81 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:CHEjap81 |
| Alternative URL: | http://dx.doi.org/10.1063/1.329283 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 10874 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 14 Jun 2008 |
| Last Modified: | 26 Dec 2012 10:05 |
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