Cheung, N. W. and von Seefeld, H. and Nicolet, M-A. and Ho, F. and Iles, P. (1981) Thermal stability of titanium nitride for shallow junction solar cell contacts. Journal of Applied Physics, 52 (6). pp. 4297-4299. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:CHEjap81
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To demonstrate the thermal stability of titanium nitride as a high-temperature diffusion barrier, the TiN-Ti-Ag metallization scheme has been tested on shallow-junction (~2000 Å) Si solar cells. Electrical measurements on reference samples with the Ti-Ag metallization scheme show serious degradation after a 600 °C, 10-min annealing. With the TiN-Ti-Ag scheme, no degradation of cell performance is observed after the same heat treatment if the TiN layer is >~1700 Å. The glass encapsulation of cells by electrostatic bonding requires such a heat treatment.
|Additional Information:||Copyright © 1981 American Institute of Physics. (Received 18 September 1980; accepted for publication 1 March 1981) At Caltech, this work was supported in part by the Department of Energy and monitored by Sandia Laboratories, Albuquerque, New Mexico (H.T. Weaver and M.B. Chamberlain).|
|Subject Keywords:||ELECTRIC CONTACTS, STABILITY, TEMPERATURE EFFECTS, TITANIUM NITRIDES, JUNCTIONS, SOLAR CELLS, THICKNESS, DIFFUSION, HEAT TREATMENTS, SILVER, METALLIZATION, EXPERIMENTAL DATA, ELECTRICAL PROPERTIES, THERMAL DEGRADATION, HIGH TEMPERATURE, ANNEALING, GLASS, ENCAPUSLATION, BONDING|
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|Deposited On:||14 Jun 2008|
|Last Modified:||26 Dec 2012 10:05|
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