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Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions

Chow, D. H. and McCaldin, J. O. and Bonnefoi, A. R. and McGill, T. C. and Sou, I. K. and Faurie, J. P. (1988) Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions. Applied Physics Letters, 51 (26). pp. 2230-2232. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:CHOapl88

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Abstract

Current-voltage behavior is studied experimentally in a Hg0.78Cd0.22Te-CdTe-Hg0.78Cd0.22Te heterostructure grown by molecular beam epitaxy. At temperatures above 160 K, energy-band diagrams suggest that the dominant low-bias current is thermionic hole emission across the CdTe barrier layer. This interpretation yields a direct determination of 390±75 meV for the HgTe-CdTe valence-band discontinuity at 300 K. Similar analyses of current-voltage data taken at 190–300 K suggest that the valence-band offset decreases at low temperatures in this heterojunction.


Item Type:Article
Additional Information:Copyright © 1988 American Institute of Physics. Received 17 August 1987; accepted 22 October 1987. We wish to acknowledge S. Nieh fo providing us with important TEM data, and O.J. Marsh, T.K. Woodward, and M.B. Johnson for valuable discussions and assistance. This work was supported by the Defense Advanced Research Projects Agency under contract No. N00014-86-K-0841 and No. F49620-87-C-0021. One of us (DHC) received financial support from International Business Machines Corporation.
Subject Keywords:MERCURY TELLURIDES, CADMIUM TELLURIDES, VALENCE BANDS, INTERFACE STATES, HETEROJUNCTIONS, THERMIONIC EMISSION, HOLES
Record Number:CaltechAUTHORS:CHOapl88
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHOapl88
Alternative URL:http://dx.doi.org/10.1063/1.98949
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:10910
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:16 Jun 2008
Last Modified:26 Dec 2012 10:06

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