Campisano, S. U. and Foti, G. and Rimini, E. and Eisen, F. H. and Tseng, W. F. and Nicolet, M-A. and Tandon, J. L. (1980) Laser pulse annealing of ion-implanted GaAs. Journal of Applied Physics, 51 (1). pp. 295-298. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:CAMjap80
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GaAs single-crystals wafers are implanted at room temperature with 400-keV Te + ions to a dose of 1×10^15 cm^–2 to form an amorphous surface layer. The recrystallization of this layer is investigated by backscattering spectrometry and transmission electron microscopy after transient annealing by Q-switched ruby laser irradiation. An energy density threshold of about 1.0 J/cm^2 exists above which the layer regrows epitaxially. Below the threshold the layer is polycrystalline; the grain size increases as the energy density approaches threshold. The results are analogous to those reported for the elemental semiconductors, Si and Ge. The threshold value observed is in good agreement with that predicted by the simple model successfully applied previously to Si and Ge.
|Additional Information:||Copyright © 1980 American Institute of Physics. (Received 11 May 1979; accepted for publication 25 July 1979) The authors are indebted to P. Baeri for providing the calculations reported in Fig.5. At Caltech, this work was supported financially in part by the Office of Naval Research (L.R. Copper); at the Rockwell International Science Center by the Defense Advanced Research Projects Agency under ARPA Order No. 3595, Contract No. MDA 903-78-C0285; at Catania by GNSM-CNR. This help is gratefully acknowledged.|
|Subject Keywords:||ANNEALING, GALLIUM ARSENIDES, PULSES, ION IMPLANTATION, MEDIUM TEMPERATURE, MONOCRYSTALS, AMORPHOUS STATE, SURFACES, LAYERS, RECRYSTALLIZATION, BACKSCATTERING, SPECTROSCOPY, ELECTRON MICROSCOPY, Q–SWITCHING, RUBY LASERS, IRRADIATION, EPITAXY, POLYCRYSTALS|
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|Deposited On:||16 Jun 2008|
|Last Modified:||26 Dec 2012 10:06|
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