Ng, W. and Yen, H. W. and Katzir, A. and Samid, I. and Yariv, A. (1976) Room-temperature operation of GaAs Bragg-mirror lasers. Applied Physics Letters, 29 (10). pp. 684-686. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:NGWapl76
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:NGWapl76
Room-temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fabricated from conventional double heterostructures involving only a single step of liquid-phase epitaxy. For gratings with a period of 3700 Å, the diodes lased at 8770 Å, which corresponds to the high-absorption side of the spontaneous emission spectrum. Thresholds as low as 6 kA/cm^2 have been realized.
|Additional Information:||Copyright © 1976 American Institute of Physics. (Received 18 August 1976) The authors would like to thank Dr. Hugh Garvin of the Hughes Research Laboratories for sputtering the silicon dioxide, and Dr. D. Scifres and Dr. R. Burnham of the Xerox Palo Alto Research Center for helpful discussions. Work supported by the Office of Naval Research (L. Cooper) and by the National Science Foundation Optical Communication Program (E. Schutzman).|
|Subject Keywords:||SEMICONDUCTOR LASERS, GALLIUM ARSENIDES, OPERATION, JUNCTION DIODES, EPITAXY, FABRICATION, THRESHOLD ENERGY, FEEDBACK, BRAGG REFLECTION|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||20 Jun 2008|
|Last Modified:||26 Dec 2012 10:06|
Repository Staff Only: item control page