Nicolet, M-A. and Bartur, M. (1981) Diffusion barriers in layered contact structures. Journal of Vacuum Science and Technology, 19 (3). pp. 786-793. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:NICjvst81
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:NICjvst81
The concept of a diffusion barrier is discussed in the context of thin-film metallization systems. The conditions that an effective thin-film diffusion barrier should meet are enumerated. The dominant role of defects in determining the kinetic properties of a barrier layer is pointed out, and the consequent importance of the method of deposition and the parameters prevailing during deposition are stressed. Examples of the practically important cases of the stuffed barrier, the passive compound barrier, and the sacrificial barrier are given, with special emphasis on the latter as applied to Al contacting of silicide layers. Unconventional ways of forming multiple or novel diffusion barriers are briefly mentioned as well.
|Additional Information:||© 1981 American Vacuum Society. (Received 3 June 1981; accepted 11 June 1981) R.S. Nowicki of Perkin-Elmer, Mountain View, California, played an essential role in the realization of this review and offered constructive comments. G. Göltz provided valuable assistance in writing. The electrical data reported in Fig. 8 were provided by D.M. Scott and P.T. Tong. The work was financially supported by the Department of Energy and monitored by Sandia Laboratories, Albuquerque, New Mexico (H.T. Weaver and M.B. Chamberlain). We thankfully acknowledge this help and support.|
|Subject Keywords:||DIFFUSION BARRIERS; LAYERS; THIN FILMS; STABILITY; ELECTRIC CONTACTS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||21 Jun 2008|
|Last Modified:||26 Dec 2012 10:07|
Repository Staff Only: item control page