Nikzad, Shouleh and Ahn, Channing C. and Atwater, Harry A. (1992) Quantitative analysis of semiconductor alloy composition during growth by reflection-electron energy loss spectroscopy. Journal of Vacuum Science and Technology B, 10 (2). pp. 762-765. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:NIKjvstb92
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Determination of alloy composition during epitaxial growth of GexSi1–x alloys has been demonstrated using reflection-electron energy loss spectroscopy (REELS) at reflection high-energy electron diffraction (RHEED) energies. Measurements of inelastic scattering intensities from Si K (1840 eV) and Ge L2,3 (1217 eV) core losses were performed using a conventional RHEED gun together with an electron energy loss spectrometer in a molecular beam epitaxy system. Comparison of ex situ composition measurements by Rutherford backscattering and energy dispersive x-ray spectroscopy in a transmission electron microscope indicate excellent agreement with composition determination by REELS, demonstrating the capability of REELS as a quantitative in situ analysis technique. Application of REELS to other semiconductors is discussed and initial results for III–V and II–VI semiconductor alloys (GaAs, CdTe, and ZnTe) are also presented.
|Additional Information:||© 1992 American Vacuum Society. (Received 16 September 1991; accepted 29 October 1991) This work was supported by the National Science Foundation P.Y.I.A. program (DMR-8958070) and the Materials Research Group program (DMR-8811795), as well as the Caltech Consortium in Chemistry and Chemical Engineering. We thank Dr. Jack Dinan for providing the II-VI smaple, and Bart Stevens for the help with the RBS measurements. Philips Electronics Instruments is acknowledged for the loan of the spectrometer.|
|Subject Keywords:||RHEED; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM EPITAXY; ENERGY–LOSS SPECTROSCOPY; GERMANIUM ALLOYS; SILICON ALLOYS; GALLIUM ARSENIDES; CADMIUM TELLURIDES; ZINC TELLURIDES; CHEMICAL ANALYSIS; BINARY ALLOYS|
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|Deposited On:||22 Jun 2008|
|Last Modified:||26 Dec 2012 10:07|
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