Nieh, C. W. and Lin, T. L. (1989) In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C. Journal of Applied Physics, 66 (7). pp. 3402-3404. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:NIEjap89
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We report an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2 which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 °C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 °C. The activation energy of the growth process is 0.8±0.1 eV.
|Additional Information:||Copyright © 1989 American Institute of Physics. Received 1 December 1988; accepted 12 May 1989. The authors would like to acknowledge Dr. M-A. Nicolet and Dr. R.W. Fathauer for helpful discussions. This research was supported by the National Science Foundation, Materials Research Group, Grant No. DMR-8811795. The research was carried out in part by the Jet Propulsion Laboratory (JPL), California Institute of Technology, and was sponsored by the Strategic Defense Initiative Organization, Innovative Science and Technology Office, and the National Aeronautics and Space Administration. The work at JPL was performed as part of JPL's Center for Space Microelectronics Technology.|
|Subject Keywords:||COBALT SILICIDES, FILMS, SILICON, MOLECULAR BEAM EPITAXY, TRANSMISSION ELECTRON MICROSCOPY, ANNEALING, KINETICS, MEDIUM TEMPERATURE, HIGH TEMPERATURE, ACTIVATION ENERGY|
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|Deposited On:||22 Jun 2008|
|Last Modified:||26 Dec 2012 10:07|
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