Harder, Christoph and Smith, John S. and Lau, Kam Y. and Yariv, Amnon (1983) Passive mode locking of buried heterostructure lasers with nonuniform current injection. Applied Physics Letters, 42 (9). pp. 772-774. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:HARapl83b
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In this letter we report on a novel method to passively mode lock a semiconductor laser. We present experimental results of GaAlAs buried heterostructure semiconductor laser with a split contact coupled to an external cavity. The split contact structure is used to introduce a controllable amount of saturable absorption which is necessary to initiate passive mode locking. Unlike previous passive mode locking techniques, the method presented does not rely on absorption introduced by damaging the crystal and is consequently inherently more reliable. We have obtained pulses with a full width at half-maximum of 35 ps at repetition frequencies between 500 MHz and 1.5 GHz.
|Additional Information:||Copyright © 1983 American Institute of Physics. Received 17 December 1982; accepted 28 January 1983. This research was supported by the Office of Naval Research, the National Science Foundation under the Optical Communication Program and by the Army Research Office. One of the authors (JSS) gratefully acknowledges the support of the Fannie and John Hertz Foundation.|
|Subject Keywords:||semiconductor lasers, mode locking, heterojunctions, electric currents, experimental data, gallium arsenides, aluminum arsenides, electric contacts, laser cavities, saturation, absorption, pulses, MHz range, GHz range|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||23 Jun 2008|
|Last Modified:||26 Dec 2012 10:07|
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