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Drift velocity of electrons in silicon at high electric fields from 4.2° to 300°K

Rodriguez, V. and Nicolet, M-A. (1969) Drift velocity of electrons in silicon at high electric fields from 4.2° to 300°K. Journal of Applied Physics, 40 (2). pp. 496-498. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:RODjap69

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Abstract

The drift velocity of electrons in silicon at high electric fields is measured in the <111> direction over the range of lattice temperatures from 4.2° to 300°K. It is established that in this range a limiting drift velocity exists. Its temperature dependence is measured. The samples used and the method of measurement are briefly described.


Item Type:Article
Additional Information:©1969 The American Institute of Physics. Received 9 September 1968. The structures were manufactured with the research facilities of Fairchild Semiconductor, Palo Alto. We thank C.A. Bittmann for making this possible. We also acknowledge the financial support of Fairchild Camera and Instrument, and the Naval Ordnance Test Station, Pasadena Annex.
Record Number:CaltechAUTHORS:RODjap69
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:RODjap69
Alternative URL:http://dx.doi.org/10.1063/1.1657427
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11059
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:26 Jun 2008
Last Modified:26 Dec 2012 10:08

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