Kapon, E. and Lu, L. T. and Rav-Noy, Z. and Yi, M. and Margalit, S. and Yariv, A. (1985) Phased arrays of buried-ridge InP/InGaAsP diode lasers. Applied Physics Letters, 46 (2). pp. 136-138. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:KAPapl85a
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Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 µm, were grown by liquid phase epitaxy. The arrays consist of index-guided, buried-ridge lasers which are coupled via their evanescent optical fields. This index-guided structure makes it possible to avoid the occurrence of lower gain in the interchannel regions. As a result, the buried-ridge arrays oscillate mainly in the fundamental supermode, which yields single lobed, narrow far-field patterns. Single lobed beams less than 4° in width were obtained from buried-ridge InP/InGaAsP phased arrays up to more than twice the threshold current.
|Additional Information:||© 1985 American Institute of Physics. Received 18 October 1984; accepted 2 November 1984. The research reported in this paper is supported through contracts with the National Science Foundation, the Office of Naval Research, and the Air Office of Scientific Research. E. Kapon would like to acknowledge the support of a Weizmann Postdoctoral Fellowship.|
|Subject Keywords:||SEMICONDUCTOR LASERS, FABRICATION, COUPLING, GAIN, OSCILLATION MODES, THRESHOLD CURRENT, INFRARED SPECTRA, INDIUM PHOSPHIDES, GALLIUM PHOSPHIDES, GALLIUM ARSENIDES, INDIUM ARSENIDES, LAYERS, WAVEGUIDES, INTEGRATED OPTICS, BURIED HETEROSTRUCTURES, LASER DIODES|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||19 Jul 2008 06:10|
|Last Modified:||26 Dec 2012 10:09|
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