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Solid-state growth of Si to produce planar surfaces

Boatright, R. L. and McCaldin, J. O. (1976) Solid-state growth of Si to produce planar surfaces. Journal of Applied Physics, 47 (6). pp. 2260-2262. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:BOAjap76

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Abstract

Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control of Si growth using a solid growth medium. Faceted dissolution pits were first produced in a Si substrate using standard photolithographic techniques and Al metallization. Si was then evaporated onto the cold structure, depositing as amorphous material. Upon heating, the amorphous Si migrated through the solid Al and grew rapidly in the faceted pits, typically refilling them flush with the surrounding substrate. Evidence that the rapid growth occurs only while the amorphous Si is dissolving into the Al is presented.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.323015DOIUNSPECIFIED
http://link.aip.org/link/?JAPIAU/47/2260/1PublisherUNSPECIFIED
Additional Information:Copyright © 1976 American Institute of Physics. Received 15 December 1975. The authors wish to thank J. Devaney and K. Evans for SEM photography, T.C. McGill for valuable discussions, and D. Lawson of JPL for providing Si wafers. Work supported in part by the Office of Naval Research and by NASA through the Jet Propulsion Laboratory.
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Funding AgencyGrant Number
Office of Naval ResearchUNSPECIFIED
NASAUNSPECIFIED
Record Number:CaltechAUTHORS:BOAjap76
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BOAjap76
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11189
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:22 Jul 2008 21:49
Last Modified:26 Dec 2012 10:10

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