Suni, I. and Shreter, U. and Nicolet, M-A. and Baker, J. E. (1984) Influence of F and Cl on the recrystallization of ion-implanted amorphous Si. Journal of Applied Physics, 56 (2). pp. 273-278. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:SUNjap84
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The effect of fluorine and chlorine implantation on the solid-phase epitaxial regrowth of amorphized <100> Si was studied in intrinsic and heavily boron doped material. Annealings were performed at 500 and 600°C. Both F and Cl retard the regrowth rate at 500°C. The growth rates are much faster in B-doped than in undoped Si. Complete regrowth in B-doped Si is obtained for all investigated doses of fluorine up to 5×10^15 F/cm^2 at 600°C for 30 min. The highest dose of chlorine (5×10^15 Cl/cm^2) stops the regrowth at this temperature.
|Additional Information:||© 1984 American Institute of Physics. Received 22 August 1983; accepted 14 February 1984. We acknowledge Professor S.S. Lau (University of California at San Diego) for valuable discussions and L. Csepregi (Fraunhofer-Institut fur Festkörpertechnologie, Federal Republic of Germany) for supplying the boron doped wafers. At Caltech the completion of this work was partially supported by the U.S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D.R. Burger). The SIMS work at the University of Illinois, Urbana-Champaign, was supported by the National Science Foundation under the MRL Grant DMR-80-20250.|
|Subject Keywords:||recrystallization, silicon, ion implantation, amorphous state, boron ions, fluorine ions, chlorine ions, annealing, high temperature, mass spectroscopy, solid−phase epitaxy|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||26 Jul 2008 07:35|
|Last Modified:||26 Dec 2012 10:11|
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