Spurgeon, Joshua M. and Plass, Katherine E. and Kayes, Brendan M. and Brunschwig, Bruce S. and Atwater, Harry A. and Lewis, Nathan S. (2008) Repeated epitaxial growth and transfer of arrays of patterned, vertically aligned, crystalline Si wires from a single Si(111) substrate. Applied Physics Letters, 93 (3). Art. No. 032112. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:SPUapl08
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Multiple arrays of Si wires were sequentially grown and transferred into a flexible polymer film from a single Si(111) wafer. After growth from a patterned, oxide-coated substrate, the wires were embedded in a polymer and then mechanically separated from the substrate, preserving the array structure in the film. The wire stubs that remained were selectively etched from the Si(111) surface to regenerate the patterned substrate. Then the growth catalyst was electrodeposited into the holes in the patterned oxide. Cycling through this set of steps allowed regrowth and polymer film transfer of several wire arrays from a single Si wafer.
|Additional Information:||©2008 American Institute of Physics. Received 26 May 2008; accepted 26 June 2008; published 25 July 2008. We acknowledge the Department of Energy and BP plc for support of this work. We also acknowledge use of facilities supported by the Caltech Center for Science and Engineering of Materials, an NSF MRSEC, and the Caltech Center for Sustainable Energy Research.|
|Subject Keywords:||catalysis, elemental semiconductors, epitaxial growth, nanowires, semiconductor growth, semiconductor quantum wires, silicon|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||26 Jul 2008 02:17|
|Last Modified:||26 Dec 2012 10:11|
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